A. Bugakova, D. Denisenko, N. Prokopenko, A. Titov
{"title":"Basic Functional CJFet Op-Amp Nodes for Operation at Low Temperatures and at Conditions of Penetrating Radiation","authors":"A. Bugakova, D. Denisenko, N. Prokopenko, A. Titov","doi":"10.1109/ELMA.2019.8771657","DOIUrl":null,"url":null,"abstract":"The new structures of the buffer amplifier (BA) and input differential stage (DS) for analog microcircuits and sensor interfaces are considered in the article. These circuit solutions, based on complementary field effect transistors with p-n-junction (CJFet), can be used in CJFet operational amplifiers (Op-Amp), comparators, etc., which are designed for operation at severe conditions. The proposed BA and DS operate in class AB mode, which enables to provide relatively large output currents in dynamic mode (units of milliamperes) at small static currents of transistors (40-100μA). The recommended application areas for BA and DS are analogue sensor interfaces for space instrumentation, high energy physics, and medicine.","PeriodicalId":304248,"journal":{"name":"2019 16th Conference on Electrical Machines, Drives and Power Systems (ELMA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th Conference on Electrical Machines, Drives and Power Systems (ELMA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELMA.2019.8771657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The new structures of the buffer amplifier (BA) and input differential stage (DS) for analog microcircuits and sensor interfaces are considered in the article. These circuit solutions, based on complementary field effect transistors with p-n-junction (CJFet), can be used in CJFet operational amplifiers (Op-Amp), comparators, etc., which are designed for operation at severe conditions. The proposed BA and DS operate in class AB mode, which enables to provide relatively large output currents in dynamic mode (units of milliamperes) at small static currents of transistors (40-100μA). The recommended application areas for BA and DS are analogue sensor interfaces for space instrumentation, high energy physics, and medicine.