A 1 MHz 4 ppm CMOS-MEMS oscillator with built-in self-test and sub-mW ovenization power

Chun-You Liu, Ming-Huang Li, H. Ranjith, Sheng-Shian Li
{"title":"A 1 MHz 4 ppm CMOS-MEMS oscillator with built-in self-test and sub-mW ovenization power","authors":"Chun-You Liu, Ming-Huang Li, H. Ranjith, Sheng-Shian Li","doi":"10.1109/IEDM.2016.7838488","DOIUrl":null,"url":null,"abstract":"A 1 MHz 4 ppm temperature-stable micro-oven μOven) controlled monolithic CMOS-MEMS oscillator has been demonstrated in this work, exhibiting heating power in sub-mW across the 100°C temperature span. The proposed novel isothermal μOven platform consists of dual heaters, one of which stabilizes the resonator temperature while the other of which serves as built-in self-test (BIST) to mimic ambient temperature, and a resistive temperature detector (RTD) for local resonator temperature monitoring. By adapting the constant-resistance (CR) feedback temperature control scheme, the integrated 1 MHz CMOS-MEMS oscillator shows a maximum frequency inaccuracy of only 4 ppm during a fast temperature ramp across the 94°C testing span (i.e., < 43 ppb/°C). The oscillator circuit shows a worst-case bias instability of 60 ppb and phase noise (PN) of −105 dBc/Hz at 1-kHz offset (Q = 1,700).","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A 1 MHz 4 ppm temperature-stable micro-oven μOven) controlled monolithic CMOS-MEMS oscillator has been demonstrated in this work, exhibiting heating power in sub-mW across the 100°C temperature span. The proposed novel isothermal μOven platform consists of dual heaters, one of which stabilizes the resonator temperature while the other of which serves as built-in self-test (BIST) to mimic ambient temperature, and a resistive temperature detector (RTD) for local resonator temperature monitoring. By adapting the constant-resistance (CR) feedback temperature control scheme, the integrated 1 MHz CMOS-MEMS oscillator shows a maximum frequency inaccuracy of only 4 ppm during a fast temperature ramp across the 94°C testing span (i.e., < 43 ppb/°C). The oscillator circuit shows a worst-case bias instability of 60 ppb and phase noise (PN) of −105 dBc/Hz at 1-kHz offset (Q = 1,700).
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
1 MHz 4 ppm CMOS-MEMS振荡器,内置自检和亚毫瓦加热功率
在这项工作中,已经展示了一个1 MHz 4 ppm温度稳定的微烤箱(μ烤箱)控制的单片CMOS-MEMS振荡器,在100°C的温度范围内显示出亚mw的加热功率。所提出的新型等温μOven平台由两个加热器组成,一个用于稳定谐振腔温度,另一个用于模拟环境温度的内置自检(BIST),以及一个用于局部谐振腔温度监测的电阻式温度检测器(RTD)。通过采用恒阻(CR)反馈温度控制方案,集成的1 MHz CMOS-MEMS振荡器在94°C测试范围(即< 43 ppb/°C)的快速温度斜坡期间显示最大频率误差仅为4 ppm。在1 khz偏置(Q = 1700)时,振荡器电路的最坏情况偏置不稳定性为60 ppb,相位噪声(PN)为- 105 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
SOI technology for quantum information processing Sustainable electronics for nano-spacecraft in deep space missions Current status and challenges of the modeling of organic photodiodes and solar cells Triboelectric energy harvester with an ultra-thin tribo-dielectric layer by initiated CVD and investigation of underlying physics in the triboelectricity 256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1