Sung-Woong Chung, T. Kishi, Jeongsoo Park, M. Yoshikawa, Kyoung-Hwan Park, T. Nagase, K. Sunouchi, H. Kanaya, G. Kim, K. Noma, Mun-Haeng Lee, A. Yamamoto, KwangMyoung Rho, K. Tsuchida, Suock Chung, J. Yi, Hyeongon Kim, Chun Yun-Seok, H. Oyamatsu, Sung-Kee Hong
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引用次数: 111
Abstract
For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance control process, MTJ process, and MTJ stack engineering. Both of successful 4Gb read and write operations were performed with high TMR, low Ic. This result will brighten the prospect of high-density STT-MRAM.
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