Min-Cheng Chen, Hsiao-Chien Chen, Ta-Hsien Lee, Yu-Hsien Lin, Jyun-Hung Shih, Bo-Wei Wang, Y. Hou, Yi-Ju Chen, Chia-Yi Lin, Chang-Hsien Lin, Y. Hsieh, C. Ho, M. Hua, J. Qiu, Tahui Wang, Fu-Liang Yang
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引用次数: 0
Abstract
This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (Vth shift > 60 mV/10-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.
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