M. Tsukude, M. Hirose, S. Tomishima, T. Tsuruda, T. Yamagata, K. Arimoto, K. Fujishima
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引用次数: 8
Abstract
LIntroduction Recently, low power DRAMs[l-3] are strongly needed for handheld machines. To reduce the data-retention current, the DRAMs should have 1)long data-retention time, 2)low active current for a refresh operation, and 3)low stand-by current. This paper describes new current saving techniques for the high-density DRAMs. The combination of the Voltage-DownConvertor (VDC) and Boosted-SenseGround (BSG) scheme[4] achieves the low active current b reducing
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