C. Metzler, A. Todri, A. Bosio, L. Dilillo, P. Girard, A. Virazel, P. Vivet, M. Belleville
{"title":"Computing detection probability of delay defects in signal line tsvs","authors":"C. Metzler, A. Todri, A. Bosio, L. Dilillo, P. Girard, A. Virazel, P. Vivet, M. Belleville","doi":"10.1109/ETS.2013.6569349","DOIUrl":null,"url":null,"abstract":"Three-dimensional stacking technology promises to solve the interconnect bottleneck problem by using Through-Silicon-Vias (TSVs) to vertically connect circuit layers. However, manufacturing steps may lead to partly broken or incompletely filled TSVs that may degrade the performance and reduce the useful lifetime of a 3D IC. Due to combinations of physical factors such as switching activity, supply noise and crosstalk, path delays can experience speed-up or slow-down that could let the effect of resistive open TSV go undetected by conventional test methods. In this work, we present a metric based on probabilistic analysis to detect delay defects induced by resistive opens that occur on signal line TSVs. Our experimental result will show the accuracy of the proposed metric.","PeriodicalId":118063,"journal":{"name":"2013 18th IEEE European Test Symposium (ETS)","volume":"330 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 18th IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS.2013.6569349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
Three-dimensional stacking technology promises to solve the interconnect bottleneck problem by using Through-Silicon-Vias (TSVs) to vertically connect circuit layers. However, manufacturing steps may lead to partly broken or incompletely filled TSVs that may degrade the performance and reduce the useful lifetime of a 3D IC. Due to combinations of physical factors such as switching activity, supply noise and crosstalk, path delays can experience speed-up or slow-down that could let the effect of resistive open TSV go undetected by conventional test methods. In this work, we present a metric based on probabilistic analysis to detect delay defects induced by resistive opens that occur on signal line TSVs. Our experimental result will show the accuracy of the proposed metric.