Xiongfeng Wang, W. Liao, T. Rao, Yuanliang Zhou, Yuankang Chen, Yudong Pang, Xiaopei Chen, Guocheng Bao
{"title":"Resistive Switching in Sputtered ZnO/IGZO Heterostructure Memristor","authors":"Xiongfeng Wang, W. Liao, T. Rao, Yuanliang Zhou, Yuankang Chen, Yudong Pang, Xiaopei Chen, Guocheng Bao","doi":"10.1109/icet55676.2022.9824179","DOIUrl":null,"url":null,"abstract":"Owing to the reversible resistive switching behavior, memristor possesses great potential in non-volatile memory application. In this work, we proposed a ZnO/IGZO heterostructure based memristor, which shows a typical bipolar resistive switching behavior under different compliance current and a high HRS/LRS ratio of 108, rendering it suitable for nonvolatile memory. Space-Charge-Limited Conduction (SCLC) mechanism is found suitable for understanding the current conduction while the diffusion of oxygen vacancies between the two dielectric layers leads to the resistive switching behavior.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icet55676.2022.9824179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Owing to the reversible resistive switching behavior, memristor possesses great potential in non-volatile memory application. In this work, we proposed a ZnO/IGZO heterostructure based memristor, which shows a typical bipolar resistive switching behavior under different compliance current and a high HRS/LRS ratio of 108, rendering it suitable for nonvolatile memory. Space-Charge-Limited Conduction (SCLC) mechanism is found suitable for understanding the current conduction while the diffusion of oxygen vacancies between the two dielectric layers leads to the resistive switching behavior.
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