{"title":"The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance","authors":"V. Gridchin, A. S. Cherkaev, E. G. Sayanova","doi":"10.1109/APEIE.2014.7040925","DOIUrl":null,"url":null,"abstract":"Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·10<sup>16</sup> - 1·10<sup>20</sup> cm<sup>-3</sup> are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2014.7040925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·1016 - 1·1020 cm-3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.
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