J. Zeng, C. F. Wheatley, R. Stokes, C. Kocon, S. Benczkowski
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引用次数: 19
Abstract
An investigation is performed in this paper upon the impact of the parasitic bipolar junction transistor (BJT) with respect to the body-diode characteristics of the power MOSFET. Simulated and experimental results show that the forward conduction and the reverse recovery characteristics of the body-diode can be improved by enhancing the parasitic BJT, formed by the N/sup +/ source (emitter), P-well (base) and N-epi layer (collector) of power MOSFETs, Furthermore, the trade-off between enhancing the parasitic BJT and retaining the device's unclamped inductive switching (UIS) capability is also addressed.
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