Jin Ju Kim, M. Cho, L. Pantisano, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B. Lee
{"title":"Effects of gate process on NBTI characteristics of TiN gate FinFET","authors":"Jin Ju Kim, M. Cho, L. Pantisano, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B. Lee","doi":"10.1109/IRPS.2012.6241913","DOIUrl":null,"url":null,"abstract":"NBTI characteristics of p-FinFET with TiN metal gates deposited by ALD or PVD method have been investigated in detail. NBTI lifetime of ALD-TiN gate device was better than that of PVD TiN gate device. The differences were primarily attributed to the differences in the thickness and quality of interfacial SiO2 layer which was affected by an oxygen scavenging reaction of TiN layer. Also, NBTI characteristics were degraded at narrower FinFET in both ALD and PVD devices as the contribution from sidewall (110) region increased.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
NBTI characteristics of p-FinFET with TiN metal gates deposited by ALD or PVD method have been investigated in detail. NBTI lifetime of ALD-TiN gate device was better than that of PVD TiN gate device. The differences were primarily attributed to the differences in the thickness and quality of interfacial SiO2 layer which was affected by an oxygen scavenging reaction of TiN layer. Also, NBTI characteristics were degraded at narrower FinFET in both ALD and PVD devices as the contribution from sidewall (110) region increased.
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