Modeling TSV open defects in 3D-stacked DRAM

Abstract

Three-dimensional (3D) stacking using through silicon vias (TSVs) is a promising solution to provide low-latency and high-bandwidth DRAM access from microprocessors. The large number of TSVs implemented in 3D DRAM circuits, however, are prone to open defects and coupling noises, leading to new test challenges. Through extensive simulation studies, this paper models the faulty behavior of TSV open defects occurred on the wordlines and the bitlines of 3D DRAM circuits, which serves as the first step for efficient and effective test and diagnosis solutions for such defects.