Low reverse recovery charge 30-V power MOSFETs for DC-DC converters

Abstract

Two low reverse recovery charge solutions for 30-V power MOSFETs are proposed. One solution is a device consisting of a MOSFET and a Schottky barrier diode (SBD) in a single chip featuring a double epi structure to enhance the breakdown voltage. The other solution is a device with an integrated SBD in every unit cell that can achieve a high threshold voltage via the P- layer with Schottky contact. Both proposed devices exhibited low reverse recovery currents in simulations. Moreover, the surge voltage of the first device which we fabricated reduced by 58%, which enables the use of a lower voltage device and a reduction of the device loss.