{"title":"18.2% efficient multicrystalline silicon cell","authors":"J. Zhao, A. Wang, P. Altermatt, M. Green","doi":"10.1109/PVSC.1997.654070","DOIUrl":null,"url":null,"abstract":"This paper reports an 18.2% energy conversion efficiency and a 645 mV open-circuit voltage from a multicrystalline silicon cell with a planar front surface tested at the National Renewable Energy Laboratory and Sandia National Laboratories under the 100 mW/cm/sup 2/ AM1.5 global spectrum at 25/spl deg/C. This is one of the highest confirmed conversion efficiencies and the highest confirmed open-circuit voltage ever reported to date for a multicrystalline silicon cell. Significantly, these HEM (heat exchange method) multicrystalline silicon solar cells were processed with the standard PERL (passivated emitter, rear locally-diffused) cell high-temperature processing sequence originally developed for float zoned wafers. The high temperature PERL cell processing did not damage the substrate properties.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper reports an 18.2% energy conversion efficiency and a 645 mV open-circuit voltage from a multicrystalline silicon cell with a planar front surface tested at the National Renewable Energy Laboratory and Sandia National Laboratories under the 100 mW/cm/sup 2/ AM1.5 global spectrum at 25/spl deg/C. This is one of the highest confirmed conversion efficiencies and the highest confirmed open-circuit voltage ever reported to date for a multicrystalline silicon cell. Significantly, these HEM (heat exchange method) multicrystalline silicon solar cells were processed with the standard PERL (passivated emitter, rear locally-diffused) cell high-temperature processing sequence originally developed for float zoned wafers. The high temperature PERL cell processing did not damage the substrate properties.