X. D. Wang, W. D. Hu, X. Chen, J. T. Xu, L. Wang, X. Y. Li, W. Lu
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引用次数: 3
Abstract
The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al0.65Ga0.35N layer.
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