Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316528
Zhiyong Li, Lin Gan, Chen Wang
Photonic crystal has attracted extensive interest in the past 25 years due to its great power to mold the flow of light in micrometer/nanometer scale and promising aspects in building all-optical integrated devices and circuits. In this talk we present our recent efforts of design, fabrication, and characterization of integrated optical elements and devices in infrared silicon two-dimensional photonic crystal slabs. These devices operate either on band gap confinement or on band dispersion control. We focus on topics such as the broad-band wide-angle self-collimation effect, on-chip optical diodes and isolators, new cavities without apparent confinement barriers, and polymer-silicon hybrid nonlinear photonic crystal.
{"title":"Design of silicon photonic crystal integrated optical devices","authors":"Zhiyong Li, Lin Gan, Chen Wang","doi":"10.1109/NUSOD.2012.6316528","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316528","url":null,"abstract":"Photonic crystal has attracted extensive interest in the past 25 years due to its great power to mold the flow of light in micrometer/nanometer scale and promising aspects in building all-optical integrated devices and circuits. In this talk we present our recent efforts of design, fabrication, and characterization of integrated optical elements and devices in infrared silicon two-dimensional photonic crystal slabs. These devices operate either on band gap confinement or on band dispersion control. We focus on topics such as the broad-band wide-angle self-collimation effect, on-chip optical diodes and isolators, new cavities without apparent confinement barriers, and polymer-silicon hybrid nonlinear photonic crystal.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125379874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316553
Y. H. Isayama, M. S. Gonçalves, H. Hernández-Figueroa
A subwavelength grating waveguide was numerically analyzed by a 3D finite element method. Waveguide parameters as core height, width, duty cycle, and index contrast were varied and its effects investigated. Frequency shifts of the order of 40THz were obtained for the dispersion relation.
{"title":"Characterization of subwavelength grating waveguides with 3D finite element method","authors":"Y. H. Isayama, M. S. Gonçalves, H. Hernández-Figueroa","doi":"10.1109/NUSOD.2012.6316553","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316553","url":null,"abstract":"A subwavelength grating waveguide was numerically analyzed by a 3D finite element method. Waveguide parameters as core height, width, duty cycle, and index contrast were varied and its effects investigated. Frequency shifts of the order of 40THz were obtained for the dispersion relation.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126969755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316506
Li-Qian Huang, Xurong Chen, Binbin Ni, Guanhai Li, Z. Li, W. Lu
Based on finite embedded coordinate transformation method, a general transformation is given to design a compact waveguide coupler. It removes the limitation of material inhomogeneity and makes the coupler be more easily realized. It also offers us much freedom and flexibility in choosing the appropriate material parameters to practically implement the device. Full wave simulation based on the finite element method is performed to confirm the performance of the waveguide coupler.
{"title":"General design of compact waveguide coupler with homogeneous media","authors":"Li-Qian Huang, Xurong Chen, Binbin Ni, Guanhai Li, Z. Li, W. Lu","doi":"10.1109/NUSOD.2012.6316506","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316506","url":null,"abstract":"Based on finite embedded coordinate transformation method, a general transformation is given to design a compact waveguide coupler. It removes the limitation of material inhomogeneity and makes the coupler be more easily realized. It also offers us much freedom and flexibility in choosing the appropriate material parameters to practically implement the device. Full wave simulation based on the finite element method is performed to confirm the performance of the waveguide coupler.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132502644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316492
Xiaomin Wang, Kang Li, F. Kong, Zhenming Zhang
For promoting the light extraction efficiency (LEE) of GaN-LED with nano-spherical hexagonal arrays, finite-difference time-domain (FDTD) method was used for optimizing the structure parameters such as spherical radius and height. The LEE of GaN spherical crown hexagonal array with 473nm radius and 250nm height over the LED surface exhibited 5.7 times enhancement than that of the planar LED, better than the LEE of whole-sphere array and pure-hemisphere array both.
{"title":"Light extraction enhancement analysis of GaN-based LED with surface spherical crown array","authors":"Xiaomin Wang, Kang Li, F. Kong, Zhenming Zhang","doi":"10.1109/NUSOD.2012.6316492","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316492","url":null,"abstract":"For promoting the light extraction efficiency (LEE) of GaN-LED with nano-spherical hexagonal arrays, finite-difference time-domain (FDTD) method was used for optimizing the structure parameters such as spherical radius and height. The LEE of GaN spherical crown hexagonal array with 473nm radius and 250nm height over the LED surface exhibited 5.7 times enhancement than that of the planar LED, better than the LEE of whole-sphere array and pure-hemisphere array both.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"679 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133299417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316505
L. Fan, F. Guo
The physical model was founded by Crosslight Apsys software for new type of photonic memory cell based on a quantum dot (QD)-quantum well (QW) hybrid structure. The physical mechanisms involved such as interband optical transition of quantum dots. The scan conditions and iterative algorithm was also set up to finish solving. Photon storage process has well proved based on I-V curve and transient time response obtained from the model. These are crucial in the signal readout-circuit design afterward.
{"title":"Physical model of an optical memory cell with coupling quantum dots","authors":"L. Fan, F. Guo","doi":"10.1109/NUSOD.2012.6316505","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316505","url":null,"abstract":"The physical model was founded by Crosslight Apsys software for new type of photonic memory cell based on a quantum dot (QD)-quantum well (QW) hybrid structure. The physical mechanisms involved such as interband optical transition of quantum dots. The scan conditions and iterative algorithm was also set up to finish solving. Photon storage process has well proved based on I-V curve and transient time response obtained from the model. These are crucial in the signal readout-circuit design afterward.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"490 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133446735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316543
J. Dickerson, K. Pantzas, T. Moudakir, P. Voss, A. Ougazzaden
P-i-N structure solar cells often provide improved performance over N-i-P devices because acceptors are easier to activate when the p-type layer is close to the surface. However, for strained InGaN solar cells on GaN, the polarization-induced electric field creates a barrier for photocurrent that impedes device performance. In this paper we show that for Ga-face growth, N-i-P structures can provide improved performance because the electric field from the junction is parallel to that formed from polarization induced sheet charges. Thus the fields complement each other to assist in creating photocurrent in N-i-P devices. Additionally we simulate an N-i-P cell using the recently demonstrated insertion of ultra-thin GaN interlayers to achieve thick strained layers with high material quality.
{"title":"Modeling of N-i-P Vs. P-i-N InGaN solar cells with ultrathin GaN interlayers for improved performance","authors":"J. Dickerson, K. Pantzas, T. Moudakir, P. Voss, A. Ougazzaden","doi":"10.1109/NUSOD.2012.6316543","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316543","url":null,"abstract":"P-i-N structure solar cells often provide improved performance over N-i-P devices because acceptors are easier to activate when the p-type layer is close to the surface. However, for strained InGaN solar cells on GaN, the polarization-induced electric field creates a barrier for photocurrent that impedes device performance. In this paper we show that for Ga-face growth, N-i-P structures can provide improved performance because the electric field from the junction is parallel to that formed from polarization induced sheet charges. Thus the fields complement each other to assist in creating photocurrent in N-i-P devices. Additionally we simulate an N-i-P cell using the recently demonstrated insertion of ultra-thin GaN interlayers to achieve thick strained layers with high material quality.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316524
N. Sule, K. Willis, S. Hagness, I. Knezevic
We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.
{"title":"Simulation of carrier dynamics in graphene on a substrate at terahertz and mid-infrared frequencies","authors":"N. Sule, K. Willis, S. Hagness, I. Knezevic","doi":"10.1109/NUSOD.2012.6316524","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316524","url":null,"abstract":"We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127630953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316502
L. Cheng, Y. Sheng, C. Xia, Weida Hu, W. Lu
The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature.
{"title":"A bisection-function technique to characterize heat transport in high-power GaN-based light-emitting-diodes package","authors":"L. Cheng, Y. Sheng, C. Xia, Weida Hu, W. Lu","doi":"10.1109/NUSOD.2012.6316502","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316502","url":null,"abstract":"The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128767026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316490
R. Oshige, Y. Osawa, Y. Fukuchi
We numerically calculate characteristics of all-optical gate switches using the cascaded second-order nonlinear effect in quasi-phase matched lithium niobate waveguides. Small amount of the domain length error causes significant decrease of the switching efficiency.
{"title":"All-optical gate switches employing the quasi-phase matched cascaded second-order nonlinear effect: Effect of fabrication errors","authors":"R. Oshige, Y. Osawa, Y. Fukuchi","doi":"10.1109/NUSOD.2012.6316490","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316490","url":null,"abstract":"We numerically calculate characteristics of all-optical gate switches using the cascaded second-order nonlinear effect in quasi-phase matched lithium niobate waveguides. Small amount of the domain length error causes significant decrease of the switching efficiency.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125462983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316557
S. Tomić, N. Vukmirović
Excitons and biexcitons in GaN/AlN quantum dots (QD) were investigated with special emphasis on the use of these QDs for single photon source applications. The theoretical methodology for the calculation of single-particle states was based on 8-band strain-dependent envelope function Hamiltonian, with the effects of spin-orbit interaction, crystal-field splitting, piezoelectric and spontaneous polarization taken into account. Exciton and biexciton states were found using the configuration interaction method. Optimal QD heights for their use in single-photon emitters were determined for various diameter to height ratios. The competition between strong confinement in GaN QDs and internal electric field, generally reported in wurtzite GaN, was also discussed, as well as its effect on appearance of bound biexcitons.
{"title":"Excitonic properties of GaN/AIN quantum dot single photon sources","authors":"S. Tomić, N. Vukmirović","doi":"10.1109/NUSOD.2012.6316557","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316557","url":null,"abstract":"Excitons and biexcitons in GaN/AlN quantum dots (QD) were investigated with special emphasis on the use of these QDs for single photon source applications. The theoretical methodology for the calculation of single-particle states was based on 8-band strain-dependent envelope function Hamiltonian, with the effects of spin-orbit interaction, crystal-field splitting, piezoelectric and spontaneous polarization taken into account. Exciton and biexciton states were found using the configuration interaction method. Optimal QD heights for their use in single-photon emitters were determined for various diameter to height ratios. The competition between strong confinement in GaN QDs and internal electric field, generally reported in wurtzite GaN, was also discussed, as well as its effect on appearance of bound biexcitons.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122588717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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