Growth Optimization, Morphological, Electrical and Sensing Characterization of V2O5 Films for SO2Sensor Chip

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI:10.1109/ICSENS.2018.8589650

C. Prajapati, N. Bhat

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引用次数: 6

Abstract

In this work, we investigate the Sulphur dioxide (SO2) sensing characteristics of reactive-ion magnetron sputtered vanadium oxide (V2O5) film of different thicknesses, followed by morphological and electrical characterization. Later, sensing material is integrated on MEMS platform to develop a sensor chip to integrated with electronics to enable portable, real-time monitoring of gas. Sputtered films are studied for their sensing characteristics at different operating conditions to realize the optimum thickness film to integrate it with CMOS platform. SO2limit of detection (LOD) and the detection precision is quantified as 38 ppb [(Ra - Rg)/Ra x 100% = 0.7] and ~10 ppb using optimized ~ 61 nm V2O5film. The film is found to be more selective towards SO2gas as against CO, CO2and NO2gases. This optimized film is successfully integrated on the sensor platform, with the chip size of 1 mm², with an inbuilt microheater power consumption of ~22 mW (at 326°C), to provide a localized uniform temperature to sensor film.

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so2传感器芯片中V2O5薄膜的生长优化、形态学、电学和传感特性

在这项工作中，我们研究了不同厚度的反应离子磁控溅射氧化钒(V2O5)薄膜的二氧化硫(SO2)传感特性，然后进行了形态学和电学表征。随后，将传感材料集成在MEMS平台上，开发出与电子器件集成的传感器芯片，实现便携式、实时的气体监测。研究了溅射薄膜在不同工作条件下的传感特性，以实现与CMOS平台集成的最佳薄膜厚度。利用优化后的~ 61 nm v2o5膜，测定了so2的检出限(LOD)和检测精度分别为38 ppb [(Ra - Rg)/Ra x 100% = 0.7]和~10 ppb。与CO、co2和no2气体相比，该膜对so2气体具有更强的选择性。该优化薄膜成功集成在传感器平台上，芯片尺寸为1 mm2，内置微加热器功耗约为22 mW(326°C)，可为传感器薄膜提供局部均匀的温度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 IEEE SENSORS

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