{"title":"Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides","authors":"A.T.H. Li, K. Lo, E. Li","doi":"10.1109/TENCON.1995.496342","DOIUrl":null,"url":null,"abstract":"The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1021 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.
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