A. Yakunin, N. Aban'shin, D. S. Mosiyash, Y. Avetisyan, G. Akchurin
{"title":"Features of Field Emission and Formation of Electron Beam in a Multi-Electrode Planar Cathode","authors":"A. Yakunin, N. Aban'shin, D. S. Mosiyash, Y. Avetisyan, G. Akchurin","doi":"10.1109/APEDE.2018.8542332","DOIUrl":null,"url":null,"abstract":"The results of investigations of physical processes in a multi-electrode planar three-level structure with field emission are presented. It is determined how the topology of elements affects the quality of electronic transport to an anode. A solution has been found that provides a fundamental reduction in the current trapping by control electrodes. The efficiency is confirmed by the results of tests of the manufactured vacuum device, the current transmission at the level of 80-98% is ensured in the entire range of variation of the gate potential.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE.2018.8542332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The results of investigations of physical processes in a multi-electrode planar three-level structure with field emission are presented. It is determined how the topology of elements affects the quality of electronic transport to an anode. A solution has been found that provides a fundamental reduction in the current trapping by control electrodes. The efficiency is confirmed by the results of tests of the manufactured vacuum device, the current transmission at the level of 80-98% is ensured in the entire range of variation of the gate potential.
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