A. Fischer, J. Klem, K. Choquette, O. Blum, A. Allerman, I. J. Fritz, S. Kurtz, W. Breiland, R. Sieg, K. Geib, J. Scott, R. Naone
{"title":"Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers","authors":"A. Fischer, J. Klem, K. Choquette, O. Blum, A. Allerman, I. J. Fritz, S. Kurtz, W. Breiland, R. Sieg, K. Geib, J. Scott, R. Naone","doi":"10.1109/ISLC.2000.882262","DOIUrl":null,"url":null,"abstract":"Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.
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