Improvement of soft error rate in MOS SRAMs

Abstract

I n t r o d u c t i o n Recently, the access time of VLSI CMOS SRAMS’.’.~ has come to the level of ECL RAMs. The a-particle induced soft error ia the SRAMs with high resistive load cell has been a serious problem, b c cause the soft error rate (SER) abruptly increases at the short cycle time ‘.‘. Although the SER is reduced by the increme of the capacitance in storage nodes, the scaled amnll cell area limits the increase of the capacitance. This paper proposes two unique improvement techniques with no extra ailicon area, and the SER is improved by 2 orders of magnitude.