{"title":"A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS","authors":"T. Pan, A. Abidi","doi":"10.1109/VLSIC.1988.1037399","DOIUrl":null,"url":null,"abstract":"A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 mu m CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8*0.9 mm/sup 2/. >","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"96","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1988 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1988.1037399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 96
Abstract
A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 mu m CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8*0.9 mm/sup 2/. >
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