R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifshitz, M. Hass, C. Inguimbert, C. Detcheverry
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引用次数: 6
Abstract
Low energy, low range ions are used for creating various conditions for energy deposition in structures responsible for SEU effects. Sensitive volume thicknesses found using this method for a set of sub-micronic SRAMs and DRAMs range from 1 to 20 /spl mu/m.
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