Large-signal characterization and modeling of MOSFET for PA applications

Abstract

This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone large-signal characterization for CMOS PA applications. The sensitivity of important parameters to the large-signal prediction for a transistor is discussed. It is demonstrated that an accurate modeling of Gm as a function of bias, as well as other important extrinsic transistor parameters, enables proper prediction of the 1-tone distortion behavior for a transistor, which in turn determines the quality of prediction for the 2-tone inter-modulation product up to the 5th order.