A bi-directional current-mode CMOS multiple valued logic memory circuit

K. Current, M. E. Hurlston
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引用次数: 17

Abstract

A bidirectional current-mode multiple-valued logic (MVL) latch circuit realized in a standard 2- mu m polysilicon gate CMOS process is presented. The circuit accepts and quantizes a bidirectional input current during the setup clock phase and latches the quantized input during the hold clock phase. Characteristics of fully integrated prototypes realized on a CMOS test chip are presented. Using logical current increments of only 10 mu A, the bidirectional current-mode MVL latch's setup and hold time has been determined to total approximately 44 ns. The input/output propagation delay for transitions between adjacent states has been determined to be approximately 50 ns at these low current levels.<>
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一种双向电流模CMOS多值逻辑存储电路
提出了一种用标准的2 μ m多晶硅栅极CMOS工艺实现的双向电流型多值逻辑锁存电路。电路在设置时钟阶段接受并量化双向输入电流,并在保持时钟阶段锁存量化输入。介绍了在CMOS测试芯片上实现的全集成原型的特点。使用仅10 μ A的逻辑电流增量,双向电流模式MVL锁存器的设置和保持时间已确定为总计约44 ns。在这些低电流水平下,相邻状态之间转换的输入/输出传播延迟已被确定为约50纳秒。
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