A. Pauchard, A. Rochas, Z. Randjelovic, P. Besse, R. Popovic
{"title":"Ultraviolet avalanche photodiode in CMOS technology","authors":"A. Pauchard, A. Rochas, Z. Randjelovic, P. Besse, R. Popovic","doi":"10.1109/IEDM.2000.904417","DOIUrl":null,"url":null,"abstract":"We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n/sub well/ regions separated by a gap of 0.6 /spl mu/m. Our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise F=7 for a mean gain =20 at /spl lambda/=400 nm, and a good gain uniformity.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904417","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n/sub well/ regions separated by a gap of 0.6 /spl mu/m. Our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise F=7 for a mean gain =20 at /spl lambda/=400 nm, and a good gain uniformity.
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