In situ reflectance monitoring of epitaxial growth

Abstract

Epitaxial growth of compound semiconductors is accomplished with MOCVD or MBE. In both these methods, many process variables must be precisely controlled to achieve the proper combination of layer thickness, chemical composition, lattice matching, and doping levels required by modern compound semiconductor devices. We have found that a simple and robust in situ monitor, normal incidence reflectance, has proven to be an indispensable tool for achieving stringent device requirements for epitaxial growth.