Improved noise wave model of microwave FETs based on artificial neural networks

Abstract

An application of artificial neural networks for accuracy improving of the microwave FET transistor noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model whose noise wave temperatures are assumed to be constant over the operating frequency range. An artificial neural network is included in the model in order to make values of the noise parameters obtained by the original wave model more accurate.