A charge sensitive preamplifier based on GaAs heterojunction bipolar transistors

C. Buttar, S. Walker, K. Shankar
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Abstract

Summary form only. The application of GaAs technology to particle physics experiments has been investigated. It appears that GaAs heterojunction bipolar transistors (HBT) might suit the requirements for the front end electronics, such as radiation hardness and adequate gm at very low current for low power dissipation and at fast shaping times. Since the operation of an HBT is similar to that of a silicon bipolar transistor, general analog simulators, such as SPICE, could be used to simulate HBT designs. A preamplifier design with RC-CR shaping has been developed, and a prototype has been fabricated using surface mount technology and discrete HBTs.<>
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基于砷化镓异质结双极晶体管的电荷敏感前置放大器
只有摘要形式。研究了砷化镓技术在粒子物理实验中的应用。似乎GaAs异质结双极晶体管(HBT)可能适合前端电子器件的要求,例如辐射硬度和在非常低的电流下足够的gm,以实现低功耗和快速成型时间。由于HBT的操作类似于硅双极晶体管,一般的模拟模拟器,如SPICE,可以用来模拟HBT设计。开发了一种RC-CR成形前置放大器设计,并使用表面贴装技术和离散hbt制造了一个原型。
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