W-band 90nm CMOS LNA design

Abstract

This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200×900μm2 low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW power consumption. Though primarily developed for our receiver array, this W-band LNA does find applications in areas such as image sensing, surveillance, radar, and millimeter-wave instrumentations. With consistent simulated and measured results, this circuit can be modified for covering even wider bandwidth whenever needed.