Pub Date : 2012-12-07DOI: 10.1109/APMC.2012.6421903
A. Osipov, H. Kobayashi, H. Suzuki
An improved version of the cylindrical near-field-to-far-field transformation (NFFFT) with computational complexity comparable to that of the circular NFFFT is described. Instead of producing a 3D radar image the proposed approach generates a 2D projection of the image on the plane, in which the radar cross section is to be determined. The imaging operator is modified so as to allow probes with directivity patterns and scanning surfaces of smaller radii.
{"title":"An improved cylindrical NFFFT for compact measurement facilities","authors":"A. Osipov, H. Kobayashi, H. Suzuki","doi":"10.1109/APMC.2012.6421903","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421903","url":null,"abstract":"An improved version of the cylindrical near-field-to-far-field transformation (NFFFT) with computational complexity comparable to that of the circular NFFFT is described. Instead of producing a 3D radar image the proposed approach generates a 2D projection of the image on the plane, in which the radar cross section is to be determined. The imaging operator is modified so as to allow probes with directivity patterns and scanning surfaces of smaller radii.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115711698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-04DOI: 10.1109/APMC.2012.6421483
H. Tsai, N. Chen, Shyh-Kang Jeng
A differential-mode bandpass filter (DM-BPF) using novel substrate-embedded defected ground structures (SE-DGSs) is demonstrated. With the proposed SE-DGS, the characteristics of the differential mode remain almost unchanged whereas the common-mode propagation is affected. The varied frequency response of the common mode leads to an avenue for broadening the common-mode suppression bandwidth of the DM-BPF. Indeed, the proposed SE-DGS is exploited for extending the 20-dB common-mode suppression bandwidth of the DM-BPF from 50% to 90%. The measured results show the demonstrated DM-BPF possesses a 84.5% 20-dB common-mode attenuation, which fully convers the 3-dB differential-mode bandwidth.
{"title":"A novel substrate-embedded defected ground structure for differential-mode filter applications","authors":"H. Tsai, N. Chen, Shyh-Kang Jeng","doi":"10.1109/APMC.2012.6421483","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421483","url":null,"abstract":"A differential-mode bandpass filter (DM-BPF) using novel substrate-embedded defected ground structures (SE-DGSs) is demonstrated. With the proposed SE-DGS, the characteristics of the differential mode remain almost unchanged whereas the common-mode propagation is affected. The varied frequency response of the common mode leads to an avenue for broadening the common-mode suppression bandwidth of the DM-BPF. Indeed, the proposed SE-DGS is exploited for extending the 20-dB common-mode suppression bandwidth of the DM-BPF from 50% to 90%. The measured results show the demonstrated DM-BPF possesses a 84.5% 20-dB common-mode attenuation, which fully convers the 3-dB differential-mode bandwidth.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132012784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-04DOI: 10.1109/APMC.2012.6421533
M. Camus, B. Butaye, C. Viallon, L. Garcia, T. Parra
A fully integrated passive mixer suitable for 2.45 GHz low consumption and low cost applications is proposed and demonstrated in a 90 nm CMOS technology. An original operating principle is adopted which is based on the use of a local oscillator square signal exhibiting a duty cycle less than 1/4. By using such a LO driving, the mixer operates as a sampler and can theoretically achieve a voltage conversion gain of 0 dB. This mixer has been integrated in a complete monolithic receiver. According to simulations, measurements demonstrate improvements of 5 dB on gain and 3 dB on noise figure without any linearity degradation and any additional cost, when compared to a common LO driving of 1/2 duty cycle.
{"title":"A CMOS low loss/high linearity passive mixer for 2.45 GHz low power applications","authors":"M. Camus, B. Butaye, C. Viallon, L. Garcia, T. Parra","doi":"10.1109/APMC.2012.6421533","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421533","url":null,"abstract":"A fully integrated passive mixer suitable for 2.45 GHz low consumption and low cost applications is proposed and demonstrated in a 90 nm CMOS technology. An original operating principle is adopted which is based on the use of a local oscillator square signal exhibiting a duty cycle less than 1/4. By using such a LO driving, the mixer operates as a sampler and can theoretically achieve a voltage conversion gain of 0 dB. This mixer has been integrated in a complete monolithic receiver. According to simulations, measurements demonstrate improvements of 5 dB on gain and 3 dB on noise figure without any linearity degradation and any additional cost, when compared to a common LO driving of 1/2 duty cycle.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117175361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-04DOI: 10.1109/APMC.2012.6421791
Chien-Chang Huang, Hsing-Hsiang Hsu, George Changlin Guu
This paper presents the on-wafer measurement technique for de-embedding the CMOS device scattering parameter (S-parameter) without the use of impedance standard substrate (ISS) calibration. The on-chip test structures are utilized including two transmission lines (TLs), a reflect element and a series resistor which characteristics need not to be known in advance. The on-chip thru-reflect-line (TRL) calibration then is applied with the TL characteristic impedance evaluation to account for the impedance differences between on-chip TLs and measurement system. The measured results of a 0.18 μm NMOS FET are shown with comparison of the L-2L de-embedding method using ISS to validate the proposed approach.
{"title":"CMOS device de-embedding without impedance standard substrate calibration for on-wafer scattering parameter measurements","authors":"Chien-Chang Huang, Hsing-Hsiang Hsu, George Changlin Guu","doi":"10.1109/APMC.2012.6421791","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421791","url":null,"abstract":"This paper presents the on-wafer measurement technique for de-embedding the CMOS device scattering parameter (S-parameter) without the use of impedance standard substrate (ISS) calibration. The on-chip test structures are utilized including two transmission lines (TLs), a reflect element and a series resistor which characteristics need not to be known in advance. The on-chip thru-reflect-line (TRL) calibration then is applied with the TL characteristic impedance evaluation to account for the impedance differences between on-chip TLs and measurement system. The measured results of a 0.18 μm NMOS FET are shown with comparison of the L-2L de-embedding method using ISS to validate the proposed approach.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130973249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-04DOI: 10.1109/APMC.2012.6421757
L. Ourak, A. Ghannam, D. Bourrier, C. Viallon, T. Parra
This paper presents the design, fabrication and characterization of suspended solenoidal transformers fabricated using a low cost single step 3D copper electroplating process. The design and optimization of solenoidal transformers with and without magnetic core are performed using HFSS. After optimization, the suspended structures reveal good electrical performance. The addition of a magnetic core to these structures shows a significant improvement of its electrical properties. Thus, an increase of 10% on Gmax, 20% on coupling coefficient k, 80% on the quality factor Q and 350% on the inductance is observed. Under probe measurements carried on the suspended structures without magnetic core exhibit a Gmax of -1.45 dB and a Q of 28.5 at 2.5 GHz. The enhanced performance coupled with the low cost 3D process makes these transformers excellent candidates for today's RF applications.
{"title":"Solenoidal transformers for magnetic materials integration","authors":"L. Ourak, A. Ghannam, D. Bourrier, C. Viallon, T. Parra","doi":"10.1109/APMC.2012.6421757","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421757","url":null,"abstract":"This paper presents the design, fabrication and characterization of suspended solenoidal transformers fabricated using a low cost single step 3D copper electroplating process. The design and optimization of solenoidal transformers with and without magnetic core are performed using HFSS. After optimization, the suspended structures reveal good electrical performance. The addition of a magnetic core to these structures shows a significant improvement of its electrical properties. Thus, an increase of 10% on Gmax, 20% on coupling coefficient k, 80% on the quality factor Q and 350% on the inductance is observed. Under probe measurements carried on the suspended structures without magnetic core exhibit a Gmax of -1.45 dB and a Q of 28.5 at 2.5 GHz. The enhanced performance coupled with the low cost 3D process makes these transformers excellent candidates for today's RF applications.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116309741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-04DOI: 10.1109/APMC.2012.6421785
Chia‐Hua Chang, H. Hsu, Lu-Che Huang, Che-Yang Chiang, E. Chang
In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz and an output power density of 5.0 W/mm at X-band.
{"title":"Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band","authors":"Chia‐Hua Chang, H. Hsu, Lu-Che Huang, Che-Yang Chiang, E. Chang","doi":"10.1109/APMC.2012.6421785","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421785","url":null,"abstract":"In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz and an output power density of 5.0 W/mm at X-band.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131037754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/APMC.2012.6421531
T. Masumoto, D. Kanemoto, H. Kanaya, R. Pokharel, K. Yoshida
This paper describes the design and implementation of a low power mixer improved its linearity. The mixer which have implemented is based on bulk-driven mixer which is known for its low power operation. On the other hand, that mixer has a demerit of poor linearity. The architecture of the proposed mixer employs DS (Derivative Superposition) method to achieve high linearity remaining in low power consumption. The proposed design has been fabricated using TSMC 0.18μm CMOS process. The measured IIP3 shows 6.38 dBm. A conversion gain shows -7.49 dB, and power consumption of 3.54 mW.
{"title":"Improving linearity of a 5.2 GHz low power mixer in 0.18μm CMOS process by using Derivative Superposition method","authors":"T. Masumoto, D. Kanemoto, H. Kanaya, R. Pokharel, K. Yoshida","doi":"10.1109/APMC.2012.6421531","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421531","url":null,"abstract":"This paper describes the design and implementation of a low power mixer improved its linearity. The mixer which have implemented is based on bulk-driven mixer which is known for its low power operation. On the other hand, that mixer has a demerit of poor linearity. The architecture of the proposed mixer employs DS (Derivative Superposition) method to achieve high linearity remaining in low power consumption. The proposed design has been fabricated using TSMC 0.18μm CMOS process. The measured IIP3 shows 6.38 dBm. A conversion gain shows -7.49 dB, and power consumption of 3.54 mW.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"715 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/APMC.2012.6421793
I. Haroun, Ta-Yeh Lin, D. Chang, C. Plett
A compact 24-26 GHz low loss 4×4 Butler matrix is implemented in an IPD (integrated passive device) technology and presented in this paper. A modified coplanar waveguide (M-CPW) branch line coupler is utilized as the core element of the Butler matrix. The proposed Butler matrix occupies a chip area of 2.2 × 1.9 mm2 (excluding the I/O test pads). The measured results showed output relative phase errors of less than 5% over a frequency range of 26-29 GHz and less than 13% over 24-25 GHz, and output amplitude imbalances of less than 1.3 dB over a frequency range of 24-27 GHz. The proposed Butler matrix is well suited for use in microwave low-cost, high performance beam forming wireless communications systems.
{"title":"A compact 24–26 GHz IPD-based 4×4 Butler matrix for beam forming antenna systems","authors":"I. Haroun, Ta-Yeh Lin, D. Chang, C. Plett","doi":"10.1109/APMC.2012.6421793","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421793","url":null,"abstract":"A compact 24-26 GHz low loss 4×4 Butler matrix is implemented in an IPD (integrated passive device) technology and presented in this paper. A modified coplanar waveguide (M-CPW) branch line coupler is utilized as the core element of the Butler matrix. The proposed Butler matrix occupies a chip area of 2.2 × 1.9 mm2 (excluding the I/O test pads). The measured results showed output relative phase errors of less than 5% over a frequency range of 26-29 GHz and less than 13% over 24-25 GHz, and output amplitude imbalances of less than 1.3 dB over a frequency range of 24-27 GHz. The proposed Butler matrix is well suited for use in microwave low-cost, high performance beam forming wireless communications systems.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115162363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/APMC.2012.6421556
J. Robert, D. Tong, A. Louzir
This paper deals with the design of a high rejection microwave notch filters using a low cost planar technology. Thanks to these filters, it is possible to use concurrently in the same device two radios both operating in the 5 GHz WiFi band. The proposed filter topology, based on properly cascading embedded open-circuited stub resonators, shows a good behavior in terms of steepness and out of band response in spite of its relative compactness. Measured performances of a realized diplexer using the designed filters showed interesting results in agreement with simulations.
{"title":"High rejection filters for 5 GHz concurrent dual-radio WiFi","authors":"J. Robert, D. Tong, A. Louzir","doi":"10.1109/APMC.2012.6421556","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421556","url":null,"abstract":"This paper deals with the design of a high rejection microwave notch filters using a low cost planar technology. Thanks to these filters, it is possible to use concurrently in the same device two radios both operating in the 5 GHz WiFi band. The proposed filter topology, based on properly cascading embedded open-circuited stub resonators, shows a good behavior in terms of steepness and out of band response in spite of its relative compactness. Measured performances of a realized diplexer using the designed filters showed interesting results in agreement with simulations.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124386090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/APMC.2012.6421537
W. Arriola, I. Kim
A new 3 dB branch line coupler with a sharp roll-off slope characteristic is introduced. The bandpass characteristic with a good out-of-band rejection property reduces noise, intermodulation, and interference problems. The filter characteristics have been obtained with four asymmetrical λ/4 open circuited coupled lines above four DGSs (Defected Ground Structure) in microstrip configuration. Also the sharp selectivity has been obtained by using four λ/2 open circuited shunt stubs. Theoretical model for the circuit is derived based on a TEM approximation. The coupler has been simulated and fabricated. Measurement results show excellent roll-off slopes in lower transition band for |S21| and |S31| such as 60dB/700MHz and 40dB/550MHz, respectively, at around 3.5 GHz. And insertion losses for |S21| and |S31|, both better than 4.1 dB have been obtained. Power and phase imbalances are 0.4 dB and ± 60, respectively. Return loss and isolation characteristics are both better than 20 dB over 42% fractional bandwidth.
{"title":"Branch line coupler with sharp roll-off slope and good out-of-band rejection","authors":"W. Arriola, I. Kim","doi":"10.1109/APMC.2012.6421537","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421537","url":null,"abstract":"A new 3 dB branch line coupler with a sharp roll-off slope characteristic is introduced. The bandpass characteristic with a good out-of-band rejection property reduces noise, intermodulation, and interference problems. The filter characteristics have been obtained with four asymmetrical λ/4 open circuited coupled lines above four DGSs (Defected Ground Structure) in microstrip configuration. Also the sharp selectivity has been obtained by using four λ/2 open circuited shunt stubs. Theoretical model for the circuit is derived based on a TEM approximation. The coupler has been simulated and fabricated. Measurement results show excellent roll-off slopes in lower transition band for |S21| and |S31| such as 60dB/700MHz and 40dB/550MHz, respectively, at around 3.5 GHz. And insertion losses for |S21| and |S31|, both better than 4.1 dB have been obtained. Power and phase imbalances are 0.4 dB and ± 60, respectively. Return loss and isolation characteristics are both better than 20 dB over 42% fractional bandwidth.","PeriodicalId":359125,"journal":{"name":"2012 Asia Pacific Microwave Conference Proceedings","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121798575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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