X. S. Loo, K. Yeo, M. Win, Zhichao Li, Xiaopeng Yu, Jer-Ming Chen
{"title":"A K-Band Differential SiGe Stacked Power Amplifier Based on Capacitive Compensation Techniques for Gain Enhancements","authors":"X. S. Loo, K. Yeo, M. Win, Zhichao Li, Xiaopeng Yu, Jer-Ming Chen","doi":"10.1109/MWSCAS.2019.8885017","DOIUrl":null,"url":null,"abstract":"A 20GHz differential 4-stacked power amplifier fabricated on 0.18μm SiGe technology is presented. Uniquely, 2 capacitive compensation techniques are introduced at common base stages and successfully boosting power gain by 2.56dB/stage. Inter-stage matching inductors are adopted and input biasing is achieved by emitter follower for reliability concern. It demonstrates favorable gain performance of >20dB against other stacking schemes while showing competitive saturated power of ≈22dBm with peak PAE of 26%.","PeriodicalId":287815,"journal":{"name":"2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2019.8885017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 20GHz differential 4-stacked power amplifier fabricated on 0.18μm SiGe technology is presented. Uniquely, 2 capacitive compensation techniques are introduced at common base stages and successfully boosting power gain by 2.56dB/stage. Inter-stage matching inductors are adopted and input biasing is achieved by emitter follower for reliability concern. It demonstrates favorable gain performance of >20dB against other stacking schemes while showing competitive saturated power of ≈22dBm with peak PAE of 26%.
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