Novel silicon epitaxy for advanced MOSFET devices

Abstract

Silicon selective epitaxial growth (SEG) and epitaxial lateral overgrowth provide a technology for fabricating thin SOI device islands, fully self-aligned double gate SOI MOSFETs and multiple layers of SOI devices. Sub-micron P-MOSFETs in 2 SOI layers of SOI islands and the double-gate fully-depleted devices show low off currents <0.2 pA//spl mu/m with low values of sub-threshold slopes (<70 mV/dec).