Rigorous characterization of silicon nanowires and slot waveguides

B. Rahman, D. Leung, N. Kejalakshmy, K. Grattan
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Abstract

Full-vectorial modal field and Poynting vector profiles for silicon based nanowires are presented by using a numerically efficient and rigorous H-field finite element method. Results for novel vertical and horizontal slot waveguides are also presented showing TE and TM modes guidance through the low index dielectric regions.
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硅纳米线和槽波导的严格表征
采用数值高效、严格的h场有限元方法,给出了硅基纳米线的全矢量模态场和Poynting矢量剖面。研究结果还表明,新型垂直和水平槽波导可以引导TE和TM模式通过低折射率介电区。
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