{"title":"A fast-simulation model for post-layout SRAM","authors":"Xiaocheng Jing, R. Yao","doi":"10.1109/ICASIC.2007.4415849","DOIUrl":null,"url":null,"abstract":"A fast, high precision model for simulating post-layout static random access memory (SRAM) is presented. For large capacity SRAM, this model can greatly save both simulation time and layout parasitic parameters extraction time while keep sufficient precision. For a typical 2KX32bit SRAM, this model can save about 92% simulation time and about 90% layout parasitic parameters extraction time, while keep the result varying within 5%.","PeriodicalId":120984,"journal":{"name":"2007 7th International Conference on ASIC","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2007.4415849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A fast, high precision model for simulating post-layout static random access memory (SRAM) is presented. For large capacity SRAM, this model can greatly save both simulation time and layout parasitic parameters extraction time while keep sufficient precision. For a typical 2KX32bit SRAM, this model can save about 92% simulation time and about 90% layout parasitic parameters extraction time, while keep the result varying within 5%.
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