{"title":"Characteristics of optically controlled dielectric resonators with light injection hole","authors":"A. Rong, Z.L. Sun","doi":"10.1109/APS.1993.385482","DOIUrl":null,"url":null,"abstract":"An enhanced model for characterizing optically controlled dielectric resonators is presented. The practical details of the structure are taken into account including the light injection hole etched on the upper shielding metallic plate, the inhomogeneous distribution of the induced excess carrier concentrations due to surface recombination and diffusion, substrate surface waves, and radial radiation if the side wall is absent. In addition, the model allows the semiconductor sample and the dielectric rod to have different radii. The model is based on the dyadic Green's function in a cylindrical coordinate system in conjunction with the equivalence principle. The infinite integrals involved in the matrix elements of the resultant characteristic equation are completed by deforming the integral contour off the real k/sub /spl rho// axis to include the contribution due to the surface wave poles.<<ETX>>","PeriodicalId":138141,"journal":{"name":"Proceedings of IEEE Antennas and Propagation Society International Symposium","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Antennas and Propagation Society International Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APS.1993.385482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An enhanced model for characterizing optically controlled dielectric resonators is presented. The practical details of the structure are taken into account including the light injection hole etched on the upper shielding metallic plate, the inhomogeneous distribution of the induced excess carrier concentrations due to surface recombination and diffusion, substrate surface waves, and radial radiation if the side wall is absent. In addition, the model allows the semiconductor sample and the dielectric rod to have different radii. The model is based on the dyadic Green's function in a cylindrical coordinate system in conjunction with the equivalence principle. The infinite integrals involved in the matrix elements of the resultant characteristic equation are completed by deforming the integral contour off the real k/sub /spl rho// axis to include the contribution due to the surface wave poles.<>