A. Mukherjee, W. Liang, P. Sakalas, A. Pawlak, M. Schröter
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引用次数: 7
Abstract
Advanced SiGe HBTs maintain quite reasonable performance even at a forward biased base-collector junction. The associated operation in saturation enables a significant reduction in power consumption. One goal of this work is the exploration of mm-wave circuits with lowest possible power consumption while maintaining reasonable performance for possible integration into mobile systems where battery lifetime is of utmost importance. A second goal is the evaluation of HBT compact models in saturation and under realistic circuit operation. This paper presents the measured and simulated results of a narrow-band and a wide-band low-noise amplifier (LNA), both operating in the W-band. The supply voltage of the narrow-band LNA is as low as 0.5V.
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