Jian-Hsing Lee, C. Kung, E. Kung, Dao-Hong Yang, J. Shih
{"title":"The internal circuit damage of a high-voltage product during the negative-current-triggered (NCT) latch-up test","authors":"Jian-Hsing Lee, C. Kung, E. Kung, Dao-Hong Yang, J. Shih","doi":"10.1109/IRPS.2013.6532069","DOIUrl":null,"url":null,"abstract":"A novel failure mechanism of the high-voltage (HV) product during the negative-current-triggered (NCT) latch-up test is found. From the failure analysis and simulation results, the failure is identified as the unexpected parasitic-bipolar transistors turn-on induced the regulator malfunction to result in the low-voltage (LV) component damage.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A novel failure mechanism of the high-voltage (HV) product during the negative-current-triggered (NCT) latch-up test is found. From the failure analysis and simulation results, the failure is identified as the unexpected parasitic-bipolar transistors turn-on induced the regulator malfunction to result in the low-voltage (LV) component damage.
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