{"title":"A Digital Adjustable 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology","authors":"M. Voelkel, R. Weigel, A. Hagelauer","doi":"10.1109/SIRF.2019.8709117","DOIUrl":null,"url":null,"abstract":"In this paper, a fully integrated digital adjustable sixport receiver front-end working at 60GHz is presented. The circuit features two variable gain amplifier, the passive sixport network, four detectors and a SPI-interface. Application area are industrial radar or angle of arrival detection. The phase measurement is done by superposition and power detection of two millimeter wave signals. The integrated circuit has a power consumption of 88.44mW from a 3.3V supply voltage. It is fabricated in a $0.13 \\mu m$ SiGe BiCMOS process and has a size of $1560 \\mu \\times 1000 \\mu m$. The RF and reference input power can be adjusted in a 21dB range over a 12bit digital interface. The receiver exhibits a 1dB compression point of -21.9dB. RF signals down to -55dBm are detectable.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a fully integrated digital adjustable sixport receiver front-end working at 60GHz is presented. The circuit features two variable gain amplifier, the passive sixport network, four detectors and a SPI-interface. Application area are industrial radar or angle of arrival detection. The phase measurement is done by superposition and power detection of two millimeter wave signals. The integrated circuit has a power consumption of 88.44mW from a 3.3V supply voltage. It is fabricated in a $0.13 \mu m$ SiGe BiCMOS process and has a size of $1560 \mu \times 1000 \mu m$. The RF and reference input power can be adjusted in a 21dB range over a 12bit digital interface. The receiver exhibits a 1dB compression point of -21.9dB. RF signals down to -55dBm are detectable.