{"title":"Novel power MOS devices with SiGe/Si heterojunctions","authors":"Ping Li, Yajuan Su, Mengsi You, Xuening Li","doi":"10.1109/ISPSD.2000.856784","DOIUrl":null,"url":null,"abstract":"Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BV/sub ds/=BV/sub ce0/=BV/sub cb0/ which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856784","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BV/sub ds/=BV/sub ce0/=BV/sub cb0/ which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
