Current-Voltage Characteristics Curves with Fixed Kn

Hsin-Chia Yang, Tzu-Chien Chen, Sheng-Ping Wen, Zhe-Wei Lin, Chen-yu Tsai, You-Sheng Lin, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi
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Abstract

FinFET, of course, behaves like MOSFET and is regulated as the conventional formula, in which the gate dielectric equivalent capacitor, carrier mobility, and channel width and length are apparently fixed and contributed to a known quantity, Kn, as in (1) and (2). Once the transistor is successfully made and measured to form the current-voltage curves, wisely fitting those curves with certain physical parameters give insight and realization in the transistor. Nevertheless, Kn may always be fixed if the sizes of channel length and width and the thickness of dielectrics are feasibly reliable-process-controlled. In the sense, the mobility is totally under inspection.
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固定Kn的电流-电压特性曲线
当然,FinFET的行为与MOSFET类似,并按照传统公式进行调节,其中栅极介电等效电容、载流子迁移率、沟道宽度和长度显然是固定的,并贡献于已知的量Kn,如(1)和(2)所示。一旦晶体管成功制造并测量形成电流-电压曲线,明智地将这些曲线与某些物理参数拟合在晶体管中,可以洞察和实现这些曲线。然而,如果通道长度和宽度的大小以及电介质的厚度是可行的可靠的过程控制,则Kn可能总是固定的。从这个意义上说,机动性完全在检查之中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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