{"title":"Current-Voltage Characteristics Curves with Fixed Kn","authors":"Hsin-Chia Yang, Tzu-Chien Chen, Sheng-Ping Wen, Zhe-Wei Lin, Chen-yu Tsai, You-Sheng Lin, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi","doi":"10.1109/ICASI55125.2022.9774443","DOIUrl":null,"url":null,"abstract":"FinFET, of course, behaves like MOSFET and is regulated as the conventional formula, in which the gate dielectric equivalent capacitor, carrier mobility, and channel width and length are apparently fixed and contributed to a known quantity, Kn, as in (1) and (2). Once the transistor is successfully made and measured to form the current-voltage curves, wisely fitting those curves with certain physical parameters give insight and realization in the transistor. Nevertheless, Kn may always be fixed if the sizes of channel length and width and the thickness of dielectrics are feasibly reliable-process-controlled. In the sense, the mobility is totally under inspection.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 8th International Conference on Applied System Innovation (ICASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASI55125.2022.9774443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
FinFET, of course, behaves like MOSFET and is regulated as the conventional formula, in which the gate dielectric equivalent capacitor, carrier mobility, and channel width and length are apparently fixed and contributed to a known quantity, Kn, as in (1) and (2). Once the transistor is successfully made and measured to form the current-voltage curves, wisely fitting those curves with certain physical parameters give insight and realization in the transistor. Nevertheless, Kn may always be fixed if the sizes of channel length and width and the thickness of dielectrics are feasibly reliable-process-controlled. In the sense, the mobility is totally under inspection.