The equivalence of van der Ziel and BSIM4 models in modeling the induced gate noise of MOSFETs

Abstract

This paper is the first independent comparison between BSIM4 and the van der Ziel models for induced gate noise. Despite the very different modeling strategies, BSIM4 successfully reproduces the classical van der Ziel model, introducing only small errors in the correlated noise term. In the case of practical circuits, noticeable errors usually arise for very low gate bias conditions yet the errors are acceptably small. Therefore, the two models can be considered as being equivalent to each other in most practical circuits, including nongrounded source conditions of operation.