{"title":"BEOL Reliability for More- Than-Moore Devices","authors":"J. Gambino","doi":"10.1109/IPFA.2018.8452508","DOIUrl":null,"url":null,"abstract":"For Moore's law technology qualifications, the Back-End of Line (BEOL) reliability focuses on electromigration, stress migration, Time Dependent Dielectric Breakdown (TDDB), and Chip-Package Interaction (CPI). For More-Than-Moore technology qualifications, some additional BEOL reliability tests are often required. Power semiconductors used in automotive applications are exposed to higher temperatures and higher currents than devices used in consumer products. Hence, the BEOL reliability includes power-temperature cycling stresses, high current pulsed stresses, high temperature storage above 200°C, and unique package connections such as 2mil Cu wirebonds or Cu clips.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

For Moore's law technology qualifications, the Back-End of Line (BEOL) reliability focuses on electromigration, stress migration, Time Dependent Dielectric Breakdown (TDDB), and Chip-Package Interaction (CPI). For More-Than-Moore technology qualifications, some additional BEOL reliability tests are often required. Power semiconductors used in automotive applications are exposed to higher temperatures and higher currents than devices used in consumer products. Hence, the BEOL reliability includes power-temperature cycling stresses, high current pulsed stresses, high temperature storage above 200°C, and unique package connections such as 2mil Cu wirebonds or Cu clips.
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超过摩尔器件的BEOL可靠性
对于摩尔定律技术资格,线后端(BEOL)可靠性侧重于电迁移,应力迁移,时间相关介电击穿(TDDB)和芯片封装相互作用(CPI)。对于More-Than-Moore技术资格,通常需要一些额外的BEOL可靠性测试。与消费产品中使用的器件相比,汽车应用中使用的功率半导体暴露在更高的温度和更高的电流下。因此,BEOL的可靠性包括功率-温度循环应力、大电流脉冲应力、200°C以上的高温存储,以及独特的封装连接,如2mil铜线键或铜夹。
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