A two dimensional analytical modeling of fully depleted dual material gate SON MOSFET and evidence for suppressed SCEs

2012 International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2012-03-15 DOI:10.1109/ICDCSYST.2012.6188768

S. Naha, S. Sarkhel, S. Sarkar

引用次数: 4

Abstract

In this paper, an analytical model of a fully depleted nanoscale dual- material gate (DMG) SON MOSFET has been developed and performance comparison is made with SMG SON MOSFET. A 2D Poisson's solution based generalized threshold voltage model has been developed. It is found that the introduction of the DMG structure in a fully depleted SON MOSFET leads to subdued SCEs due to a step-function in the channel potential profile thereby improving device performance and enhances devices scalability some steps further with the extreme exploitation of the idea, threshold control by means of multiple material gate electrode.

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全耗尽双材料栅极SON MOSFET的二维解析模型和抑制ses的证据

本文建立了全耗尽纳米双材料栅极(DMG) SON MOSFET的分析模型，并与SMG SON MOSFET进行了性能比较。建立了一种基于二维泊松解的广义阈值电压模型。研究发现，在完全耗尽的SON MOSFET中引入DMG结构，由于通道电位分布中的阶跃函数，导致sce降低，从而提高了器件性能，并进一步提高了器件的可扩展性，通过多种材料栅极的阈值控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 International Conference on Devices, Circuits and Systems (ICDCS)

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