{"title":"Degradation of Si high-speed photodiodes by irradiation induced defects and restoration at low temperature","authors":"J. S. Laird, T. Hirao, S. Onoda, T. Kamiya","doi":"10.1109/NUSOD.2003.1263225","DOIUrl":null,"url":null,"abstract":"Abstrocr- The high-speed characteristics of communication p*i-n+ photodiodes mcluding frequency respoare and responsMty are both degraded by high radiation fields in space. Deep levels generated by high-energy particles decrease the signal strength and reduce the generation reambination ldetime and dark curreui, reducing the signal-to noiae ratio (SNR), The use of lower temperatures as a means of restoring the SMI has been proposed in previous studies. Here we investigate the possibility theoretically using Technology CAD simulation.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"263 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1263225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Abstrocr- The high-speed characteristics of communication p*i-n+ photodiodes mcluding frequency respoare and responsMty are both degraded by high radiation fields in space. Deep levels generated by high-energy particles decrease the signal strength and reduce the generation reambination ldetime and dark curreui, reducing the signal-to noiae ratio (SNR), The use of lower temperatures as a means of restoring the SMI has been proposed in previous studies. Here we investigate the possibility theoretically using Technology CAD simulation.
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