Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259042
J. Piprek, V. Jayaraman, M. Mehta, J. Bowers
A hybrid approach that combines the advantages of GaAs mirrors and InP active layers in InP/GaAs wafer bonded 1.31 /spl mu/m VCSELs is described. This novel device concept features intra-cavity ring contacts, five strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction in order to reduce absorption by p-doped layers. The tunnel junction is literally confined forming an aperture for current injection and wave guiding. A self-consistent VCSEL simulation software is employed in order to analyze and optimize the internal device physics.
{"title":"Balanced optimization of 1.31 /spl mu/m tunnel-junction VCSELs","authors":"J. Piprek, V. Jayaraman, M. Mehta, J. Bowers","doi":"10.1109/NUSOD.2003.1259042","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259042","url":null,"abstract":"A hybrid approach that combines the advantages of GaAs mirrors and InP active layers in InP/GaAs wafer bonded 1.31 /spl mu/m VCSELs is described. This novel device concept features intra-cavity ring contacts, five strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction in order to reduce absorption by p-doped layers. The tunnel junction is literally confined forming an aperture for current injection and wave guiding. A self-consistent VCSEL simulation software is employed in order to analyze and optimize the internal device physics.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124856796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259029
Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui
Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.
数值模拟应用于基于InGaAs/InGaAsP MQW的10 Gbps eam - dfb - ld和40 Gbps eam的开发。数值方法的覆盖范围包括EAM的传输特性和掺杂扩散以及EAM的消光比和啁啾。
{"title":"Numerical simulations in the development process of ultrahigh- speed MQW electroabsorption modulators","authors":"Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui","doi":"10.1109/NUSOD.2003.1259029","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259029","url":null,"abstract":"Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125159374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259025
T. Saito, Y. Arakawa
Atomistic calculations of the electronic states in In/sub 0.2/Ga/sub 0.8/N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp/sup 3/ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.
{"title":"Atomistic calculation of electronic states in III-V nitride quantum dots","authors":"T. Saito, Y. Arakawa","doi":"10.1109/NUSOD.2003.1259025","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259025","url":null,"abstract":"Atomistic calculations of the electronic states in In/sub 0.2/Ga/sub 0.8/N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp/sup 3/ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122151769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259041
Siu Fung Yu
Investigation of the design constraints of ARROW ( anti-resonant reflecting optical waveguide) VCSELs (vertical cavity surface emitting lasers) for stable single mode operation is presented. A simple transfer matrix method is used to analyze the modal characteristics of ARROW VCSELs with the influence of spatial hole burning. The wave equations and rate equations of carrier concentration and photon density are solved self-consistently to study the mechanisms of mode competition.
{"title":"Modal characteristics of anti-resonant reflecting optical waveguide vertical cavity surface emitting lasers","authors":"Siu Fung Yu","doi":"10.1109/NUSOD.2003.1259041","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259041","url":null,"abstract":"Investigation of the design constraints of ARROW ( anti-resonant reflecting optical waveguide) VCSELs (vertical cavity surface emitting lasers) for stable single mode operation is presented. A simple transfer matrix method is used to analyze the modal characteristics of ARROW VCSELs with the influence of spatial hole burning. The wave equations and rate equations of carrier concentration and photon density are solved self-consistently to study the mechanisms of mode competition.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126329026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259051
B. Afeyan, K. Won, A. Kanaev
At PRI, we are building modules for photonics device modeling using MATLAB and FEMLAB and multiresolution analysis techniques. There are many challenges that await technical innovations to make these modules competitive with much higher end software currently available commercially. Our initial emphasis has been on the modeling of nonlinear optical phenomena that advanced devices rely on as well as nonlinear optical processes one may want to control in such semiconductor laser devices for telecom and homeland security applications. We have also modeled superprisms and photonic band gap structures. A comprehensive semiconductor laser diode model is being constructed and tested against experimental data so that gain modeling, carrier, heat and photon transport can all be combined in a predictive module. Wavelets can help choose optimum meshes that are dynamically adapted to capture nonlinear steepening and field concentrations that change over the course of one simulation. Finite element techniques are well suited for static non-uniformities. Finite elements and wavelets are thus seen to play complementary and mutually reinforcing roles.
{"title":"Modeling and design of optical semiconductor devices using FEMLAB, Wavelets and adaptivity","authors":"B. Afeyan, K. Won, A. Kanaev","doi":"10.1109/NUSOD.2003.1259051","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259051","url":null,"abstract":"At PRI, we are building modules for photonics device modeling using MATLAB and FEMLAB and multiresolution analysis techniques. There are many challenges that await technical innovations to make these modules competitive with much higher end software currently available commercially. Our initial emphasis has been on the modeling of nonlinear optical phenomena that advanced devices rely on as well as nonlinear optical processes one may want to control in such semiconductor laser devices for telecom and homeland security applications. We have also modeled superprisms and photonic band gap structures. A comprehensive semiconductor laser diode model is being constructed and tested against experimental data so that gain modeling, carrier, heat and photon transport can all be combined in a predictive module. Wavelets can help choose optimum meshes that are dynamically adapted to capture nonlinear steepening and field concentrations that change over the course of one simulation. Finite element techniques are well suited for static non-uniformities. Finite elements and wavelets are thus seen to play complementary and mutually reinforcing roles.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130164304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259027
A. Haque, T. Maruyama, H. Yagi, T. Sano, S. Arai
In-pane polarization dependence of gain in compressively strained quantum-wire (Q-wire) lasers with strain-compensating barriers (SC) is investigated. Strained Q-wire lasers with SC barriers and a cavity normal to wire axis should provide minimum transparency carrier density. In moderately wide Q-wires, highest peak material gain is obtained with lattice-matched barriers when the cavity is parallel to the wire axis. Polarization dependence of the gain in the presence of elastic strain relaxation shows non-trivial dependence on wire width due to a complicated interaction between elastic strain relaxation and quantum size effects.
{"title":"In-plane polarization dependence of gain in strained quantum-wire lasers with strain-compensating barriers","authors":"A. Haque, T. Maruyama, H. Yagi, T. Sano, S. Arai","doi":"10.1109/NUSOD.2003.1259027","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259027","url":null,"abstract":"In-pane polarization dependence of gain in compressively strained quantum-wire (Q-wire) lasers with strain-compensating barriers (SC) is investigated. Strained Q-wire lasers with SC barriers and a cavity normal to wire axis should provide minimum transparency carrier density. In moderately wide Q-wires, highest peak material gain is obtained with lattice-matched barriers when the cavity is parallel to the wire axis. Polarization dependence of the gain in the presence of elastic strain relaxation shows non-trivial dependence on wire width due to a complicated interaction between elastic strain relaxation and quantum size effects.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128896414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259048
S. Yu, X. W. Sun, C. Yuen, S. Lau
Prismatic zinc oxide (ZnO) hexagonal microtubes have been fabricated on silicon substrate by vapor transport. It is shown that the ZnO hexagonal microtubes have demonstrated ultraviolet (/spl sim/393 nm) lasing emission under 355 nm optical excitation. Furthermore, the lasing as well as modal characteristics of the microtube lasers are investigated theoretically. It can be explained that the high threshold pump intensity of the microtube lasers is due to high radiation loss near the prismatic facets. In addition, our calculation has shown that the output beam from the microtube lasers has a shape similar to the doughnut ring, which can find application as laser tweezers to trap low refractive index small particles.
{"title":"Investigation of the ultraviolet lasing characteristics of zinc hexagonal microtubes","authors":"S. Yu, X. W. Sun, C. Yuen, S. Lau","doi":"10.1109/NUSOD.2003.1259048","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259048","url":null,"abstract":"Prismatic zinc oxide (ZnO) hexagonal microtubes have been fabricated on silicon substrate by vapor transport. It is shown that the ZnO hexagonal microtubes have demonstrated ultraviolet (/spl sim/393 nm) lasing emission under 355 nm optical excitation. Furthermore, the lasing as well as modal characteristics of the microtube lasers are investigated theoretically. It can be explained that the high threshold pump intensity of the microtube lasers is due to high radiation loss near the prismatic facets. In addition, our calculation has shown that the output beam from the microtube lasers has a shape similar to the doughnut ring, which can find application as laser tweezers to trap low refractive index small particles.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132138785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259043
Z. Sikorski, M. Turowski, Y. Jiang, T. Czyszanowski, A. Prezekwas, M. Wartak
The paper presents latest enhancements to the CFD-ACE+ Multiphysics O'SEMI module including efficient optics modeling, material gain modeling, coupled laser near-field optics and automated extraction of compact models from high-fidelity simulations, for system level design. As an example of practical design problem, computational results obtained for the steady-state DC current crowding analysis in an intra-cavity contacted VCSEL is presented. A transient analysis is also performed to compute optical mode competition, I-V and L-I characteristics, parametric simulation, and device design optimization.
{"title":"Multiphysics modeling tools for vertical cavity surface emitting lasers","authors":"Z. Sikorski, M. Turowski, Y. Jiang, T. Czyszanowski, A. Prezekwas, M. Wartak","doi":"10.1109/NUSOD.2003.1259043","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259043","url":null,"abstract":"The paper presents latest enhancements to the CFD-ACE+ Multiphysics O'SEMI module including efficient optics modeling, material gain modeling, coupled laser near-field optics and automated extraction of compact models from high-fidelity simulations, for system level design. As an example of practical design problem, computational results obtained for the steady-state DC current crowding analysis in an intra-cavity contacted VCSEL is presented. A transient analysis is also performed to compute optical mode competition, I-V and L-I characteristics, parametric simulation, and device design optimization.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127660538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259059
J. Moloney
Two methodologies in designing ultra-wide-band interactive simulation tools for photonic components, containing semiconductor active structures is described in the paper.
本文介绍了设计含半导体有源结构的光子元件超宽带交互仿真工具的两种方法。
{"title":"Ultra-broadband photonic simulators for passive and active components and systems","authors":"J. Moloney","doi":"10.1109/NUSOD.2003.1259059","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259059","url":null,"abstract":"Two methodologies in designing ultra-wide-band interactive simulation tools for photonic components, containing semiconductor active structures is described in the paper.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117104614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259038
A. Witzig, L. Schneider, M. Pfeiffer, M. Streiff, T. Lundstrom, P. Tikhomirov, Wei-Choon Ng, W. Fichtner
The interaction of the injected carriers with the optical modes for particle and energy conservation is examined by using the commercially available device and system simulator, DESSIS. The use of DESSIS for predictive modeling in the design and optimization of high power single mode lasers is demonstrated. The device structure and design parameters including a double quantum-well active region, a ridge width and a ridge angle for the optimization of a leaky-waveguide laser are explained.
{"title":"Optimization of a leaky-waveguide laser using DESSIS","authors":"A. Witzig, L. Schneider, M. Pfeiffer, M. Streiff, T. Lundstrom, P. Tikhomirov, Wei-Choon Ng, W. Fichtner","doi":"10.1109/NUSOD.2003.1259038","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259038","url":null,"abstract":"The interaction of the injected carriers with the optical modes for particle and energy conservation is examined by using the commercially available device and system simulator, DESSIS. The use of DESSIS for predictive modeling in the design and optimization of high power single mode lasers is demonstrated. The device structure and design parameters including a double quantum-well active region, a ridge width and a ridge angle for the optimization of a leaky-waveguide laser are explained.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122072097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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