A novel amplifier linearization technique using an anti-parallel reconfigurable transistor (ART) pair

T. Yum, Q. Xue, C. Chan
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引用次数: 4

Abstract

A new amplifier linearization methodology using an anti-parallel reconfigurable transistor (ART) pair is proposed. Unlike conventional linearization methods in which only one technique is employed, our ART method utilizes all terminals of an additional transistor and provides a unified pre-, post- and cubic-polynomial distortion technique for performance enhancement. Experimental results reveal a 42 dB reduction for the third-order intermodulation distortion (IMD3) and 15 dB for the fifth-order (IMD5) at 2.1 GHz operation band. The input 1-dB gain compression point and phase distortion have been improved effectively up to 8 dB and 15/spl deg/, respectively, under a 5-V operation voltage. Meanwhile, the proposed approach demonstrates a peak power added efficiency (PAE) of 61% with 16 dB transducer gain and 21 dBm output power for a single stage low-power SiGe BJT transistor. The adjacent channel power ratio (ACPR) is maintained over -45 and -60 dBc for a W-CDMA and PHS modulated signal, respectively, under a wide range of output power.
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一种利用反并联可重构晶体管(ART)对的新型放大器线性化技术
提出了一种利用反并联可重构晶体管(ART)对实现放大器线性化的新方法。与只使用一种技术的传统线性化方法不同,我们的ART方法利用了一个额外晶体管的所有端子,并提供了统一的前、后和三多项式失真技术来提高性能。实验结果表明,在2.1 GHz工作频段,三阶互调失真(IMD3)降低了42 dB,五阶互调失真(IMD5)降低了15 dB。在5v工作电压下,输入1db增益压缩点和相位失真分别有效提高到8db和15/spl度。同时,该方法证明了单级低功率SiGe BJT晶体管在16 dB换能器增益和21 dBm输出功率下的峰值功率增加效率(PAE)为61%。在很宽的输出功率范围内,W-CDMA和小灵通调制信号的相邻通道功率比(ACPR)分别保持在-45和-60 dBc以上。
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