Thermal Model for Single-Phase Dual Active Bridge Converter for Future Smart Transformer in Indonesia

2023 13th International Conference on Power, Energy and Electrical Engineering (CPEEE) Pub Date : 2023-02-25 DOI:10.1109/CPEEE56777.2023.10217537

M. Ridwan, Yohan Fajar Sidik, Sriyono, Kevin Gausultan, Rifka Widyastuti, F. D. Wijaya, R. Irnawan, M. Ahmad

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Abstract

The future smart transformer in Indonesia is designed to be efficient by using the dual-active bridge (DAB) converter for its DC-DC converter. A DAB converter has capability of zero-voltage switching (ZVS), which has lower losses than other DC-DC converter design. However, thermal model becomes the key process to calculate the losses of a DAB converter for future smart transformer in Indonesia. This research uses Foster thermal model and PLECS software to estimate and simulate the thermal model to find the thermal losses. Two types of switching devices, IGBT and SiC MOSFET, are used in the DAB converter and then the thermal losses are compared. The simulation model is used to validate that the analytical model of a DAB converter can be used to calculate the total losses of a DAB converter. The results show that the design of future smart transformer in Indonesia with a DAB converter using SiC MOSFET has lower losses than using IGBT as switching in the same switching frequency.

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印尼未来智能变压器单相双有源桥式变换器热模型

印度尼西亚未来的智能变压器将通过在其DC-DC转换器中使用双有源桥(DAB)转换器来提高效率。DAB变换器具有零电压开关(ZVS)能力，比其它DC-DC变换器具有更低的损耗。然而，热模型成为计算印尼未来智能变压器DAB变换器损耗的关键过程。本研究采用Foster热模型和PLECS软件对热模型进行估算和模拟，得出热损失。将IGBT和SiC MOSFET两种开关器件应用于DAB变换器中，并对其热损耗进行了比较。仿真模型验证了DAB变换器的解析模型可以用于计算DAB变换器的总损耗。结果表明，在印尼设计的未来智能变压器中，使用SiC MOSFET的DAB变换器比在相同开关频率下使用IGBT作为开关具有更低的损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2023 13th International Conference on Power, Energy and Electrical Engineering (CPEEE)

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