1W continuous-wave laser generation and excited state absorption measurements in Cr2+:ZnSe

A. Podlipensky, V. G. Shcherbitsky, N. Kuleshov, V. Levchenko, V. Yakimovich, A. Diening, M. Mond, S. Kuck, G. Huber
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引用次数: 6

Abstract

Cr2+-doped chalcogenide crystals were shown recently to be promising materials for highly efficient and broadly tunable mid-IR (2-3 μm) lasers [1]. Possible applications of these lasers include medicine, remote sensing and trace gas analysis. Pulsed [2], continuous wave (cw) [3, 4], gain-switched [5] and diode-side-pumped laser operation [6] has been demonstrated with Cr2+:ZnSe, which exhibit slope efficiency as high as 63% and tunability between 2138 nm and 2760 nm. However, one of the problems encountered with this kind of materials is their relatively high level of passive losses at the laser wavelength. Thus both detailed spectroscopic studies including ESA measurements and synthesis of materials by using various crystal-growth techniques are necessary to estimate the amount of intrinsic optical losses and reduce as much as possible what is due to extrinsic reasons such as unwanted impurities and lattice defects. In this paper we report for the first time to our knowledge on the results of ESA measurements in Cr2+:ZnSe as well as on the realization of 1W efficient cw laser with Cr2+:ZnSe crystals.
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Cr2+:ZnSe中1W连续波激光的产生及激发态吸收测量
近年来,Cr2+掺杂硫系化物晶体被证明是高效、宽可调谐中红外(2-3 μm)激光器的重要材料[1]。这些激光器的可能应用包括医学、遥感和痕量气体分析。用Cr2+:ZnSe进行脉冲[2]、连续波(cw)[3,4]、增益开关[5]和二极管侧泵浦激光操作[6],其斜率效率高达63%,在2138 nm和2760 nm之间可调。然而,这类材料遇到的问题之一是它们在激光波长处相对较高的被动损耗。因此,包括ESA测量在内的详细光谱研究和通过使用各种晶体生长技术合成材料都是必要的,以估计内在光学损耗的数量,并尽可能减少由于外部原因(如不需要的杂质和晶格缺陷)造成的损耗。本文首次报道了Cr2+:ZnSe的ESA测量结果,以及用Cr2+:ZnSe晶体实现1W高效连续波激光器。
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