A comparison study on hydrogen sensing performance of Pt/MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3

Jerry Yu, Y. Liu, F. Cai, M. Shafiei, Gang Chen, N. Motta, W. Wlodarski, K. Kalantar-zadeh, P. Lai
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引用次数: 4

Abstract

In this work, we investigate how hydrogen sensing performance of thermally evaporated MoO3 nano-platelets can be further improved by RF sputtering a thin layer of tantalum oxide (Ta2O5) or lanthanum oxide (La2O3). We show that dissociated hydrogen atoms cause the thin film layer to be polarised, inducing a measurable potential difference greater than that as reported previously. We attribute these observations to the presence of numerous traps in the thin layer; their states allow a stronger trapping of charge at the Pt-thin film oxide interface as compared to the MoO3 sensors without the coating. Under exposure to H2 (10 000 ppm), the maximum change in dielectric constant is 45.6 (at 260 °C) for the Ta2O5/MoO3 nanoplatelets and 31.6 (at 220 °C) for the La2O3/MoO3 nano-platelets. Subsequently, the maximum sensitivity for the Ta2O5/MoO3 and La2O3/MoO3 based sensors is 16.8 and 7.5, respectively.
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薄层Ta2O5和La2O3包覆Pt/MoO3纳米片感氢性能的比较研究
在这项工作中,我们研究了如何通过射频溅射薄层氧化钽(Ta2O5)或氧化镧(La2O3)来进一步提高热蒸发MoO3纳米片的氢传感性能。我们表明,解离的氢原子导致薄膜层极化,诱导一个可测量的电位差比以前报道的大。我们将这些观察结果归因于薄层中存在许多圈闭;与没有涂层的MoO3传感器相比,它们的状态允许在pt薄膜氧化物界面上更强的电荷捕获。暴露于H2 (10,000 ppm)下,Ta2O5/MoO3纳米片的介电常数最大变化为45.6(260°C), La2O3/MoO3纳米片的介电常数最大变化为31.6(220°C)。基于Ta2O5/MoO3和La2O3/MoO3的传感器的最大灵敏度分别为16.8和7.5。
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