Metal containing material processing on coater/developer system

S. Kawakami, Hiroshi Mizunoura, K. Matsunaga, Koichi Hontake, Hiroshi Nakamura, S. Shimura, M. Enomoto
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Abstract

Challenges of processing metal containing materials need to be addressed in order apply this technology to Behavior of metal containing materials on coater/developer processing including coating process, developer process and tool metal contamination is studied using CLEAN TRACKTM LITHIUS ProTM Z (Tokyo Electron Limited). Through this work, coating uniformity and coating film defectivity were studied. Metal containing material performance was comparable to conventional materials. Especially, new dispense system (NDS) demonstrated up to 80% reduction in coating defect for metal containing materials. As for processed wafer metal contamination, coated wafer metal contamination achieved less than 1.0E10 atoms/cm2 with 3 materials. After develop metal contamination also achieved less than 1.0E10 atoms/cm2 with 2 materials. Furthermore, through the metal defect study, metal residues and metal contamination were reduced by developer rinse optimization.
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含金属材料在涂布机/显影剂系统上的加工
为了将该技术应用于含金属材料在涂层/显影剂加工上的行为,包括涂层过程、显影剂过程和工具金属污染,需要解决加工含金属材料的挑战,使用CLEAN TRACKTM LITHIUS ProTM Z(东京电子有限公司)研究。通过这项工作,研究了涂层均匀性和涂层缺陷。含金属材料的性能可与传统材料相媲美。特别是,新的点胶系统(NDS)表明,高达80%的涂层缺陷减少含金属材料。对于加工后的晶圆金属污染,3种材料的涂层晶圆金属污染均小于1.0E10原子/cm2。开发后的2种材料的金属污染也达到了小于1.0E10原子/cm2。此外,通过对金属缺陷的研究,通过显影剂漂洗优化,减少了金属残留和金属污染。
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