S. Kawakami, Hiroshi Mizunoura, K. Matsunaga, Koichi Hontake, Hiroshi Nakamura, S. Shimura, M. Enomoto
{"title":"Metal containing material processing on coater/developer system","authors":"S. Kawakami, Hiroshi Mizunoura, K. Matsunaga, Koichi Hontake, Hiroshi Nakamura, S. Shimura, M. Enomoto","doi":"10.1117/12.2219106","DOIUrl":null,"url":null,"abstract":"Challenges of processing metal containing materials need to be addressed in order apply this technology to Behavior of metal containing materials on coater/developer processing including coating process, developer process and tool metal contamination is studied using CLEAN TRACKTM LITHIUS ProTM Z (Tokyo Electron Limited). Through this work, coating uniformity and coating film defectivity were studied. Metal containing material performance was comparable to conventional materials. Especially, new dispense system (NDS) demonstrated up to 80% reduction in coating defect for metal containing materials. As for processed wafer metal contamination, coated wafer metal contamination achieved less than 1.0E10 atoms/cm2 with 3 materials. After develop metal contamination also achieved less than 1.0E10 atoms/cm2 with 2 materials. Furthermore, through the metal defect study, metal residues and metal contamination were reduced by developer rinse optimization.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2219106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Challenges of processing metal containing materials need to be addressed in order apply this technology to Behavior of metal containing materials on coater/developer processing including coating process, developer process and tool metal contamination is studied using CLEAN TRACKTM LITHIUS ProTM Z (Tokyo Electron Limited). Through this work, coating uniformity and coating film defectivity were studied. Metal containing material performance was comparable to conventional materials. Especially, new dispense system (NDS) demonstrated up to 80% reduction in coating defect for metal containing materials. As for processed wafer metal contamination, coated wafer metal contamination achieved less than 1.0E10 atoms/cm2 with 3 materials. After develop metal contamination also achieved less than 1.0E10 atoms/cm2 with 2 materials. Furthermore, through the metal defect study, metal residues and metal contamination were reduced by developer rinse optimization.